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AMERICAN BRIGHT OPTOELECTRONICS CORP. Z-BEND DOMILED GaP 10mA BL-PDP-GRS-C10 * Feature: 1. Surface mount LED. 2. 120 viewing angle. 3. Small package outline (LxWxH) of 3.2 x 2.8 x 1.8 mm. 4. Qualified according to JEDEC moisture sensitivity Level 2. 5. Compatible to both IR reflow soldering and TTW soldering. * Package Dimension: Recommended Solder Pad V.4 Page: 1 of 5 AMERICAN BRIGHT OPTOELECTRONICS CORP. * Z-BEND DOMILED GaP 10mA BL-PDP-GRS-C10 Optical Characteristics: Part Number BL-PDP-GRS-C10 BIN G1 BIN G2 BIN H1 BIN H2 Chip Technology Color GaP / Green, 560nm Luminous Intensity @ IF = 10mA Iv (mcd) 1.80 - 4.50 1.80 - 2.24 2.24 - 2.80 2.80 - 3.55 3.55 - 4.50 Forward voltage @ If=10 mA. 2.05 V (typ.); 2.45 V (max) Chip Type GaP Viewing Angle at 50% Iv 120 Reverse current, IR @ VR = 5V, (max) 100 A Note: 1. Other luminous intensity groups are also available upon request. 2. Luminous intensity is measured with an accuracy of 11%. 3. Wavelength binning is carried for all units as per the wavelength-binning table. Only one wavelength group is allowed for each reel. 4. An optional Vf binning is also available upon request. Binning scheme is as per following table. * Absolute Maximum Ratings: Parameter DC forward current. Peak pulse current; (tp 10 s, Duty cycle = 0.005) Reverse voltage. LED junction temperature. Operating temperature. Storage temperature. Power dissipation ( at room temperature ) Maximum Value 30 500 5 100 -40 ... +100 -40 ... +100 75 Unit mA mA V C C C mW * Vf Binning: Vf Bin @ 10mA 01 02 03 04 Forward voltage (V) 1.25 ... 1.55 1.55 ... 1.85 1.85 ... 2.15 2.15 ... 2.45 Forward voltage, Vf is measured with an accuracy of 0.1 V. V.4 Page: 2 of 5 AMERICAN BRIGHT OPTOELECTRONICS CORP. Z-BEND DOMILED GaP 10mA BL-PDP-GRS-C10 * Wavelength Grouping: Color BL-PDP; Pure Green Group Full W X Y Z Wavelength distribution (nm) 552.5 - 564.5 552.5 - 555.5 555.5 - 558.5 558.5 - 561.5 561.5 - 564.5 Wavelength is measured with an accuracy of 1 nm. * Typical electro-optical characteristics curves: Fig.1 Relative luminous intensity vs. forward current. Intensity vs. DC Forw ard Current Relative intensity. Normalized at 10 mA. 4.0 35 Fig.2 Forward current vs. forward voltage. Forward Current vs. Forward Voltage Forward Current (mA) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 5 10 15 20 25 30 35 FORW ARD CURRENT (m A) 30 25 20 15 10 5 0 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 Forward Voltage (V) Fig.3 Radiation pattern. 30 20 10 0 1.0 35 Fig.4 Maximum forward current vs. temperature. 30 40 0.8 25 Forward Current, If 20 50 0.6 15 60 70 80 90 0.4 10 5 0.2 0 0 10 20 30 40 50 60 70 80 90 100 Ambient Temperature 0 V.4 Page: 3 of 5 AMERICAN BRIGHT OPTOELECTRONICS CORP. Z-BEND DOMILED GaP 10mA BL-PDP-GRS-C10 Fig.6 Recommended IR-reflow Soldering Profile (acc. to IPC 9501). Classification Reflow Profile (JEDEC J-STD-020B) 275 250 225 Ramp-up 3 oC/sec 60-150s 235-240oC 10 30s Temperature (oC) 200 175 150 125 100 75 50 25 0 183 C o Rampdown Preheat 60360s max 50 100 150 200 Time (sec) Fig.7 Recommended TTW Soldering Profile (acc. to CECC 00802). V.4 Page: 4 of 5 AMERICAN BRIGHT OPTOELECTRONICS CORP. Z-BEND DOMILED GaP 10mA BL-PDP-GRS-C10 * Taping And Orientation: Reels come in quantity of 2000 units. Reel diameters is 180 mm V.4 Page: 5 of 5 |
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